Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy

Beaudoin, M.; Arsenault, C. J.; Izquierdo, R. et Meunier, M. (1989). « Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy ». Applied Physics Letters, 55(25), pp. 2640-2642.

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Résumé

The interface between near stoichiometric hydrogenated amorphous silicon nitride (a-SiNx :H) deposited on hydrogenated amorphous silicon (a-Si:H) is studied using x-ray photoelectron spectroscopy as a function of the electron escape angle. This method allows the study of a-SiNx :H overlayers of about 40 Å thickness which is typical of the thicknesses used for well and barrier layers in superlattices and quantum well structures. Within the instrument’s resolution, subnitride components constitute less than 1% of the interface bonds. It is therefore concluded that the interface is atomically abrupt.

Type: Article de revue scientifique
Mots-clés ou Sujets: Semiconductor junctions, amorphous semiconductors, silicon nitride
Unité d'appartenance: Faculté des sciences > Département d'informatique
Déposé par: Ricardo Izquierdo
Date de dépôt: 11 févr. 2016 14:33
Dernière modification: 20 avr. 2016 19:29
Adresse URL : http://www.archipel.uqam.ca/id/eprint/7795

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